Toshiba has launched five 1200V silicon-carbide (SiC) MOSFETs that leverage the company’s third generation SiC technology to boost the energy efficiency of high-voltage industrial applications. These devices are used in equipment such as EV charging stations, photovoltaic inverters, industrial power supplies, uninterruptible power supplies (UPS), and bidirectional or half-bridge DC-DC converters.

By improving the on-resistance x gate-drain charge (RDS(on) x QGD) figure of merit by more than 80%, Toshiba’s latest SiC technology elevates both conduction and switching performance in power-conversion topologies.