High-efficiency, high-speed-switching series tested to 1400 V and UIL avalanche tested to 800 mJ, targets industrial supplies, EV charging, motor drives and solar inverters.
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series.
SemiQ will exhibit the new devices for the first time at PCIM 2025 in Nuremberg at Alfatec’s stand (Hall 4A, Booth109), from the 6th to the 8th May.
The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances (RDSon) ranging from 80 to 16 mΩ respectively.
All devices are operational to 175oC and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (RDSon = 16 mΩ, 160 mJ for the 80 mΩ device).
The easy-to-parallel devices implement top-side cooling and an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab.
The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies.
Dr. Timothy Han, President at SemiQ said: “The launch of the TSPAK Gen3 SiC MOSFET family enables the creation of higher power density supplies, at a lower system cost as well as more compact system designs at large scale.”
All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25oC). The series is available immediately.
The series’ cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ). Key specifications are shown in the table below – all characteristics shown have been measured at 25oC.
